The effects of oxidation on the optical properties of amorphous SiC films
نویسنده
چکیده
Amorphous silicon carbide films were deposited by the r.f. sputtering technique using a SiC target. The deposited films were annealed in dry oxygen ambient in the temperature range of 400–700 °C. Optical absorption studies indicated blue shifting effects as the annealing temperature was increased. © 2001 Published by Elsevier Science B.V.
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